IXA70R1200NA
IXYS
IXYS
DISC IGBT XPT-GENX3 SOT-227B(MIN
$27.00
Available to order
Reference Price (USD)
1+
$27.00000
500+
$26.73
1000+
$26.46
1500+
$26.19
2000+
$25.92
2500+
$25.65
Exquisite packaging
Discount
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Enhance your electronic projects with the IXA70R1200NA Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXA70R1200NA ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXA70R1200NA for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 350 W
- Switching Energy: 4.5mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 190 nC
- Td (on/off) @ 25°C: 70ns/250ns
- Test Condition: 600V, 50A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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