IXXX200N65B4
IXYS
IXYS
IGBT 650V 370A 1150W PLUS247
$21.87
Available to order
Reference Price (USD)
1+
$18.55000
10+
$16.86300
30+
$15.59833
120+
$14.33358
270+
$13.06881
510+
$12.22567
Exquisite packaging
Discount
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Optimize your power systems with the IXXX200N65B4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXX200N65B4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 370 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
- Power - Max: 1150 W
- Switching Energy: 4.4mJ (on), 2.2mJ (off)
- Input Type: Standard
- Gate Charge: 553 nC
- Td (on/off) @ 25°C: 62ns/245ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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