ISL9V3040D3ST
onsemi
onsemi
IGBT 430V 21A TO252AA
$1.96
Available to order
Reference Price (USD)
2,500+
$0.66150
5,000+
$0.63000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the ISL9V3040D3ST Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the ISL9V3040D3ST ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the ISL9V3040D3ST for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 17 nC
- Td (on/off) @ 25°C: -/4.8µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
Related Products
Microchip Technology
APT80GA90LD40
STMicroelectronics
STGW40V60DF
IXYS
IXGT10N170
IXYS
IXYK110N120B4
STMicroelectronics
STGB10M65DF2
Infineon Technologies
IKD15N60RAATMA1
IXYS
IXYH30N65C3
Infineon Technologies
SKB15N60E8151
Rohm Semiconductor
RGTH40TK65DGC11
STMicroelectronics