IXGT10N170
IXYS
IXYS
IGBT 1700V 20A 110W TO268
$9.70
Available to order
Reference Price (USD)
30+
$6.22067
Exquisite packaging
Discount
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Enhance your electronic projects with the IXGT10N170 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXGT10N170 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXGT10N170 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 70 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
- Power - Max: 110 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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