APT35GN120L2DQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 94A 379W TO264
$10.78
Available to order
Reference Price (USD)
1+
$13.01000
10+
$11.71100
25+
$10.67040
100+
$9.62940
250+
$8.84860
500+
$8.06784
1,000+
$7.02683
Exquisite packaging
Discount
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Enhance your electronic projects with the APT35GN120L2DQ2G Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the APT35GN120L2DQ2G ensures precision and reliability. Microchip Technology's cutting-edge technology guarantees a component that meets the highest industry standards. Choose APT35GN120L2DQ2G for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 94 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
- Power - Max: 379 W
- Switching Energy: 2.315mJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: 24ns/300ns
- Test Condition: 800V, 35A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: -
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