BIDW30N60T
Bourns Inc.
Bourns Inc.
IGBT 600V 30A TRENCH TO-247
$4.35
Available to order
Reference Price (USD)
1+
$4.35000
500+
$4.3065
1000+
$4.263
1500+
$4.2195
2000+
$4.176
2500+
$4.1325
Exquisite packaging
Discount
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Upgrade your power management systems with the BIDW30N60T Single IGBT transistor from Bourns Inc.. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the BIDW30N60T provides reliable and efficient operation. Bourns Inc.'s advanced semiconductor technology guarantees a component that excels in performance and durability. Choose BIDW30N60T for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
- Power - Max: 230 W
- Switching Energy: 1.85mJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 76 nC
- Td (on/off) @ 25°C: 30ns/67ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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