APT45GP120B2DQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 113A 625W TMAX
$21.80
Available to order
Reference Price (USD)
1+
$22.11000
10+
$20.44800
25+
$18.78960
100+
$17.46330
250+
$16.02644
500+
$15.25276
Exquisite packaging
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Discover the APT45GP120B2DQ2G Single IGBT transistor by Microchip Technology, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the APT45GP120B2DQ2G ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the APT45GP120B2DQ2G for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 113 A
- Current - Collector Pulsed (Icm): 170 A
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 45A
- Power - Max: 625 W
- Switching Energy: 900µJ (on), 905µJ (off)
- Input Type: Standard
- Gate Charge: 185 nC
- Td (on/off) @ 25°C: 18ns/100ns
- Test Condition: 600V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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