BAS21E6433HTMA1
Infineon Technologies

Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
$0.05
Available to order
Reference Price (USD)
1+
$0.04900
500+
$0.04851
1000+
$0.04802
1500+
$0.04753
2000+
$0.04704
2500+
$0.04655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAS21E6433HTMA1 by Infineon Technologies is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The BAS21E6433HTMA1 is also used in smart home devices and wearable technology, ensuring seamless operation. Infineon Technologies's expertise in semiconductor technology guarantees that the BAS21E6433HTMA1 delivers top-notch performance in any application.
Specifications
- Product Status: Not For New Designs
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
- Operating Temperature - Junction: 150°C (Max)