BC847BWT1G
onsemi
onsemi
TRANS NPN 45V 0.1A SC70-3
$0.16
Available to order
Reference Price (USD)
3,000+
$0.02685
6,000+
$0.02430
15,000+
$0.02124
30,000+
$0.01921
75,000+
$0.01717
150,000+
$0.01445
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC847BWT1G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BC847BWT1G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
Related Products
Diotec Semiconductor
BC557BBK
Nexperia USA Inc.
BCX51-10TF
Diodes Incorporated
MMST5401-7-F
Renesas Electronics America Inc
2SA1222-T-AZ
onsemi
BC547CBU
Taiwan Semiconductor Corporation
BC847BW RFG
Rohm Semiconductor
2SB1316TL
Renesas Electronics America Inc
H5N2521FN-E#T2
Nexperia USA Inc.
PBSS5330PA,135
Renesas Electronics America Inc