H5N2521FN-E#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$0.97
Available to order
Reference Price (USD)
1+
$0.97000
500+
$0.9603
1000+
$0.9506
1500+
$0.9409
2000+
$0.9312
2500+
$0.9215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The H5N2521FN-E#T2 from Renesas Electronics America Inc is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the H5N2521FN-E#T2 is a reliable choice for both commercial and industrial use. Trust Renesas Electronics America Inc to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Nexperia USA Inc.
PBSS5330PA,135
Renesas Electronics America Inc
2SA952-T-A
Nexperia USA Inc.
BC869-25,115
Central Semiconductor Corp
2N4237 PBFREE
NTE Electronics, Inc
NTE215
onsemi
BC337-25ZL1G
Rohm Semiconductor
2SCR574D3TL1
Rohm Semiconductor
2SA2029FHAT2LR
Diotec Semiconductor
BC817K-40
onsemi