BCM847QASZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2NPN 45V 0.1A DFN1010B-6
$0.44
Available to order
Reference Price (USD)
5,000+
$0.11700
10,000+
$0.11050
25,000+
$0.10725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCM847QASZ by Nexperia USA Inc. redefines efficiency in Bipolar Transistor Arrays with its ultra-low noise characteristics. Perfect for RF modules, oscillators, and ADC/DAC circuits, this Discrete Semiconductor Product minimizes signal distortion in high-frequency applications. Automotive infotainment systems and IoT devices benefit from its fast response time and energy-saving operation. Backed by Nexperia USA Inc. s quality assurance, the BCM847QASZ guarantees 100% testing for parameter consistency across all arrayed transistors.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
Related Products
onsemi
FMB5551
Central Semiconductor Corp
CMKT3906 TR PBFREE
Analog Devices Inc.
MAT01GH
Toshiba Semiconductor and Storage
HN4C51J(TE85L,F)
Diodes Incorporated
MMDT3904Q-7-F
Nexperia USA Inc.
BCV64B,215
Solid State Inc.
2N2914
Panjit International Inc.
BC817DS-25_R1_00001
Rohm Semiconductor
EMX52T2R
Texas Instruments