HN4C51J(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN 120V 0.1A SMV
$0.46
Available to order
Reference Price (USD)
3,000+
$0.12994
6,000+
$0.12206
15,000+
$0.11419
30,000+
$0.10500
Exquisite packaging
Discount
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Meet the HN4C51J(TE85L,F) Toshiba Semiconductor and Storage s answer to high-density transistor requirements in SMT assemblies. This BJT Array offers isolated transistors with individual thermal paths, preventing thermal runaway in power regulators. Widely adopted in server farms and 5G base stations, the HN4C51J(TE85L,F) demonstrates exceptional MTBF ratings. Its moisture-resistant packaging complies with JEDEC Level 3 standards, ideal for humid operating conditions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Common Base
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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