BCR08PNH6433XTMA1
Infineon Technologies
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
$0.10
Available to order
Reference Price (USD)
10,000+
$0.05326
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with Infineon Technologies's BCR08PNH6433XTMA1, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The BCR08PNH6433XTMA1 is widely used in lighting systems, portable electronics, and automotive accessories. Infineon Technologies's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the BCR08PNH6433XTMA1 is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 170MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
onsemi
NSBA124XDXV6T1G
Panasonic Electronic Components
NP0J1A300A
onsemi
NSBC143EPDP6T5G
Toshiba Semiconductor and Storage
RN2706,LF
Nexperia USA Inc.
PEMD9,315
Toshiba Semiconductor and Storage
RN49A1FE(TE85L,F)
Rohm Semiconductor
UMH6NTR
Nexperia USA Inc.
PUMD14,115
NXP Semiconductors
PQMD10147
Toshiba Semiconductor and Storage