BD135G
onsemi
onsemi
TRANS NPN 45V 1.5A TO126
$0.88
Available to order
Reference Price (USD)
1+
$0.60000
10+
$0.51200
100+
$0.38250
500+
$0.30054
1,000+
$0.23223
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BD135G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BD135G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Diotec Semiconductor
BC847BW-AQ
onsemi
2N6038G
Diotec Semiconductor
BC548A
Microchip Technology
JANKCB2N3440
Nexperia USA Inc.
PHPT61006PY,115
Toshiba Semiconductor and Storage
2SC6026MFVGR,L3F
Diodes Incorporated
BCX6825TA
Diodes Incorporated
ZXTN08400BFFTA
Nexperia USA Inc.
BC817-16QBZ
NTE Electronics, Inc