BFG67/X,215
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT143B
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFG67/X,215, a premium RF Bipolar Junction Transistor (BJT) by NXP USA Inc., part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFG67/X,215 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP USA Inc. for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1GHz
- Gain: -
- Power - Max: 380mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
Related Products
NXP USA Inc.
BFG505/X,215
NTE Electronics, Inc
NTE224
Infineon Technologies
BFP450
Harris Corporation
HFA3127B
Renesas Electronics America Inc
HSG1002VE-TL-E
NXP USA Inc.
BFU520XRVL
Solid State Inc.
2N3499
NTE Electronics, Inc
NTE195A
Infineon Technologies
BFP196WH6327XTSA1
MACOM Technology Solutions