HFA3127B
Harris Corporation
Harris Corporation
RF SMALL SIGNAL TRANSISTOR
$4.92
Available to order
Reference Price (USD)
1+
$4.92000
500+
$4.8708
1000+
$4.8216
1500+
$4.7724
2000+
$4.7232
2500+
$4.674
Exquisite packaging
Discount
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Introducing the HFA3127B, a high-performance RF Bipolar Junction Transistor (BJT) from Harris Corporation, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The HFA3127B features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Harris Corporation for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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