BFP196WH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 7.5GHZ SOT343-4
$0.45
Available to order
Reference Price (USD)
3,000+
$0.09351
6,000+
$0.08497
15,000+
$0.07643
30,000+
$0.07216
75,000+
$0.06490
150,000+
$0.06277
Exquisite packaging
Discount
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The BFP196WH6327XTSA1 from Infineon Technologies is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the BFP196WH6327XTSA1 is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Infineon Technologies for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7.5GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
- Gain: 12.5dB ~ 19dB
- Power - Max: 700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-1
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