BFR181WH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT323-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07395
6,000+
$0.06504
15,000+
$0.05613
30,000+
$0.05316
75,000+
$0.05019
150,000+
$0.04425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFR181WH6327XTSA1, a cutting-edge RF Bipolar Junction Transistor (BJT) from Infineon Technologies, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFR181WH6327XTSA1 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Infineon Technologies for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
Related Products
NXP USA Inc.
BFU530R
Infineon Technologies
BFR843EL3E6327XTSA1
MACOM Technology Solutions
MRF316
MACOM Technology Solutions
MRF16006
Toshiba Semiconductor and Storage
MT3S111P(TE12L,F)
NTE Electronics, Inc
NTE69
Infineon Technologies
BFR750L3RHE6327
Infineon Technologies
BFP183WH6327XTSA1
Infineon Technologies
BF771E6327HTSA1
NTE Electronics, Inc