NTE69
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 25V 1.1GHZ TO92
$1.75
Available to order
Reference Price (USD)
1+
$1.75000
500+
$1.7325
1000+
$1.715
1500+
$1.6975
2000+
$1.68
2500+
$1.6625
Exquisite packaging
Discount
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Introducing the NTE69, a high-performance RF Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NTE69 features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on NTE Electronics, Inc for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 4mA, 4V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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