UPA811T-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
RF SMALL SIGNAL TRANSISTOR
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
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Discover the UPA811T-T1-A, a premium RF Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The UPA811T-T1-A boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Renesas Electronics America Inc for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
- Gain: 7.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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