NTE16003
NTE Electronics, Inc
NTE Electronics, Inc
T-NPN SI RF PO=7.5 WATTS
$45.38
Available to order
Reference Price (USD)
1+
$45.38000
500+
$44.9262
1000+
$44.4724
1500+
$44.0186
2000+
$43.5648
2500+
$43.111
Exquisite packaging
Discount
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The NTE16003 RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NTE16003 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NTE Electronics, Inc for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 11.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.5A
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-212MA, TO-210AB, TO-60-4, Stud
- Supplier Device Package: TO-60
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