MMBT918LT1G
onsemi
onsemi
RF TRANS NPN 15V 600MHZ SOT23-3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.05091
6,000+
$0.04452
15,000+
$0.03813
30,000+
$0.03600
75,000+
$0.03387
150,000+
$0.02961
Exquisite packaging
Discount
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Discover the MMBT918LT1G, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The MMBT918LT1G features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 11dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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