MMBTH10-7-F
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 25V 650MHZ SOT23-3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.05000
6,000+
$0.04400
15,000+
$0.03800
30,000+
$0.03600
75,000+
$0.03400
150,000+
$0.03000
Exquisite packaging
Discount
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The MMBTH10-7-F by Diodes Incorporated is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the MMBTH10-7-F from Diodes Incorporated, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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