2SC5347AF-TD-E
onsemi
onsemi
RF TRANS NPN 12V 4.7GHZ PCP
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
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The 2SC5347AF-TD-E from onsemi is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the 2SC5347AF-TD-E is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust onsemi for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 4.7GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
- Gain: 8dB
- Power - Max: 1.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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