HFA3127RZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 5 NPN 12V 8GHZ 16QFN
$12.24
Available to order
Reference Price (USD)
1+
$10.13000
10+
$9.11300
25+
$8.30240
100+
$7.49250
300+
$6.88500
500+
$6.27750
1,000+
$5.46750
Exquisite packaging
Discount
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Upgrade your RF circuits with the HFA3127RZ, a high-efficiency Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The HFA3127RZ offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Renesas Electronics America Inc for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-QFN (3x3)
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