NE85619-T1-A
Renesas
Renesas
SAME AS 2SC5006 NPN SILICON AMPL
$0.80
Available to order
Reference Price (USD)
1+
$0.80000
500+
$0.792
1000+
$0.784
1500+
$0.776
2000+
$0.768
2500+
$0.76
Exquisite packaging
Discount
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Introducing the NE85619-T1-A, a high-performance RF Bipolar Junction Transistor (BJT) from Renesas, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NE85619-T1-A features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Renesas for top-tier RF BJT solutions.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 9dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
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