NTE2633
NTE Electronics, Inc
NTE Electronics, Inc
T-NPN SI VIDEO DR 1GHZ TO-126
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
Discount
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The NTE2633 by NTE Electronics, Inc is a premium RF Bipolar Junction Transistor (BJT) in the Discrete Semiconductor Products category. Engineered for high-frequency performance, this transistor provides exceptional gain and low noise, making it ideal for RF and microwave applications. Its advanced construction ensures reliability in harsh environments, suitable for military, aerospace, and medical devices. Key features include high transition frequency, excellent thermal management, and low distortion. Applications range from RF amplifiers to oscillators and mixers. Trust NTE Electronics, Inc for high-quality RF BJTs that meet the highest industry standards.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 95V
- Frequency - Transition: 1.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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