NTE23
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 14V 2GHZ TO92
$1.96
Available to order
Reference Price (USD)
1+
$1.96000
500+
$1.9404
1000+
$1.9208
1500+
$1.9012
2000+
$1.8816
2500+
$1.862
Exquisite packaging
Discount
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The NTE23 RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NTE23 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NTE Electronics, Inc for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 14V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): 3dB @ 500MHz
- Gain: 15dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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