NE68030-T1-A
Renesas
Renesas
SAME AS 2SC4228 NPN SILICON AMPL
$2.00
Available to order
Reference Price (USD)
1+
$2.00000
500+
$1.98
1000+
$1.96
1500+
$1.94
2000+
$1.92
2500+
$1.9
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NE68030-T1-A, a cutting-edge RF Bipolar Junction Transistor (BJT) from Renesas, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NE68030-T1-A features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Renesas for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
- Gain: 7.5dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
onsemi
2SC5347AF-TD-E
Infineon Technologies
BFR340FH6327XTSA1
Renesas
NE662M04-T2-A
onsemi
NSVF2250WT1G
NTE Electronics, Inc
NTE23
Renesas
NE85619-T1-A
NTE Electronics, Inc
NTE2633
Renesas Electronics America Inc
HFA3127RZ
Infineon Technologies
BFP193WH6327XTSA1
NXP USA Inc.