MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 6V 8GHZ PW-MINI
$0.89
Available to order
Reference Price (USD)
1,000+
$0.38250
2,000+
$0.35700
5,000+
$0.33915
10,000+
$0.32513
25,000+
$0.31620
Exquisite packaging
Discount
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The MT3S111P(TE12L,F) RF Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the MT3S111P(TE12L,F) is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Toshiba Semiconductor and Storage for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
- Gain: 10.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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