2SC5226A-5-TL-E
onsemi

onsemi
RF TRANS NPN 10V 7GHZ 3MCP
$0.50
Available to order
Reference Price (USD)
3,000+
$0.13947
6,000+
$0.13101
15,000+
$0.12256
30,000+
$0.11270
Exquisite packaging
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Introducing the 2SC5226A-5-TL-E, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The 2SC5226A-5-TL-E features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 1GHz
- Gain: 12dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP