BFU530AVL
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 12V 11GHZ TO236AB
$0.25
Available to order
Reference Price (USD)
10,000+
$0.12150
Exquisite packaging
Discount
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Enhance your RF designs with the BFU530AVL, a high-efficiency Bipolar Junction Transistor (BJT) from NXP USA Inc.. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFU530AVL features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust NXP USA Inc. for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
- Gain: 12dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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