BFQ67W,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 10V 8GHZ SOT323-3
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
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Discover the BFQ67W,115, a premium RF Bipolar Junction Transistor (BJT) by NXP USA Inc., part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFQ67W,115 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP USA Inc. for cutting-edge RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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