NSVF4020SG4T1G
onsemi
onsemi
RF TRANS NPN 8V 16GHZ SC82FL/MCP
$0.91
Available to order
Reference Price (USD)
3,000+
$0.23100
6,000+
$0.21600
15,000+
$0.20850
30,000+
$0.20100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the NSVF4020SG4T1G, a high-performance RF Bipolar Junction Transistor (BJT) from onsemi, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NSVF4020SG4T1G features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on onsemi for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 16GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
- Gain: 17.5dB
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: SC-82FL/MCPH4
Related Products
Infineon Technologies
BFP182WE6327
Infineon Technologies
BFR183E6327HTSA1
NTE Electronics, Inc
NTE319P
Rohm Semiconductor
2SC4774T106S
onsemi
MCH4017-TL-H
Rohm Semiconductor
2SC4098T106P
Renesas Electronics America Inc
HFA3102BZ
Renesas
NE58219-T1-A
Infineon Technologies
BFP640FESDH6327XTSA1
Renesas