BFR183E6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT23-3
$0.51
Available to order
Reference Price (USD)
3,000+
$0.09652
6,000+
$0.09167
15,000+
$0.08439
30,000+
$0.07954
75,000+
$0.07227
150,000+
$0.06984
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the BFR183E6327HTSA1, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFR183E6327HTSA1 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Infineon Technologies for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain: 17.5dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
NTE Electronics, Inc
NTE319P
Rohm Semiconductor
2SC4774T106S
onsemi
MCH4017-TL-H
Rohm Semiconductor
2SC4098T106P
Renesas Electronics America Inc
HFA3102BZ
Renesas
NE58219-T1-A
Infineon Technologies
BFP640FESDH6327XTSA1
Renesas
NE68139-T1-A
Toshiba Semiconductor and Storage
2SC5087R(TE85L,F)
Infineon Technologies