BFR182WH6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT323-3
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07395
6,000+
$0.06504
15,000+
$0.05613
30,000+
$0.05316
75,000+
$0.05019
150,000+
$0.04425
Exquisite packaging
Discount
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The BFR182WH6327XTSA1 by Infineon Technologies is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the BFR182WH6327XTSA1 from Infineon Technologies, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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