HFA3127BZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 5 NPN 12V 8GHZ 16SOIC
$12.98
Available to order
Reference Price (USD)
1+
$10.12000
10+
$9.14300
48+
$8.71771
144+
$7.56944
288+
$7.22924
528+
$6.59138
1,008+
$5.74087
Exquisite packaging
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Discover the HFA3127BZ, a cutting-edge RF Bipolar Junction Transistor (BJT) from Renesas Electronics America Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The HFA3127BZ features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Renesas Electronics America Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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