BFR840L3RHESDE6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.6V 75GHZ TSLP-3
$0.71
Available to order
Reference Price (USD)
15,000+
$0.19764
30,000+
$0.18739
Exquisite packaging
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Enhance your RF designs with the BFR840L3RHESDE6327XTSA1, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFR840L3RHESDE6327XTSA1 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Infineon Technologies for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- Frequency - Transition: 75GHz
- Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
- Gain: 27dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
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