2SC5013-T1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 2SC5013-T1-A RF Bipolar Junction Transistor (BJT) by Renesas Electronics America Inc is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the 2SC5013-T1-A is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Renesas Electronics America Inc for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
- Gain: 9.5dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
Related Products
Infineon Technologies
BFR92PE6327HTSA1
Fairchild Semiconductor
SS9018FBU
Renesas Electronics America Inc
2SC4957-T1-A
Infineon Technologies
BFR93AE6327HTSA1
Central Semiconductor Corp
PN3563 PBFREE
onsemi
2SC5226A-4-TL-E
NXP USA Inc.
BFU760F,115
NXP USA Inc.
BFG410W,115
Infineon Technologies
BFR193FH6327
onsemi