NTE295
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 75V 250MHZ TO126
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
Discount
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The NTE295 RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NTE295 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NTE Electronics, Inc for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 75V
- Frequency - Transition: 250MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 750mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 5V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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