BFU730LXZ
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 3V 53GHZ 3DFN1006
$0.51
Available to order
Reference Price (USD)
10,000+
$0.12591
30,000+
$0.11578
Exquisite packaging
Discount
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Introducing the BFU730LXZ, a high-performance RF Bipolar Junction Transistor (BJT) from NXP USA Inc., designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The BFU730LXZ features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on NXP USA Inc. for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3V
- Frequency - Transition: 53GHz
- Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
- Gain: 15.8dB
- Power - Max: 160mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006C-3
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