NTE311
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 30V 800MHZ TO39
$6.46
Available to order
Reference Price (USD)
1+
$6.46000
500+
$6.3954
1000+
$6.3308
1500+
$6.2662
2000+
$6.2016
2500+
$6.137
Exquisite packaging
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Enhance your RF designs with the NTE311, a high-efficiency Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The NTE311 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust NTE Electronics, Inc for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 800MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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