BLF6G10LS-135RN112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$70.31
Available to order
Reference Price (USD)
1+
$70.31000
500+
$69.6069
1000+
$68.9038
1500+
$68.2007
2000+
$67.4976
2500+
$66.7945
Exquisite packaging
Discount
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The BLF6G10LS-135RN112 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BLF6G10LS-135RN112 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BLF6G10LS-135RN112 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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