BLF8G10LS-270,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
$75.82
Available to order
Reference Price (USD)
60+
$76.54650
Exquisite packaging
Discount
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Designed for superior RF performance, the BLF8G10LS-270,112 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The BLF8G10LS-270,112 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the BLF8G10LS-270,112 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 820MHz ~ 960MHz
- Gain: 18.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 4.2µA
- Noise Figure: -
- Current - Test: 2 A
- Power - Output: 270W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
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