BSC004NE2LS5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH <= 40V
$3.02
Available to order
Reference Price (USD)
1+
$3.02000
500+
$2.9898
1000+
$2.9596
1500+
$2.9294
2000+
$2.8992
2500+
$2.869
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSC004NE2LS5ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSC004NE2LS5ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SQS840EN-T1_GE3
Fairchild Semiconductor
HUF76139S3ST
Vishay Siliconix
SIHP12N60E-GE3
onsemi
NTMFS4C53NT1G
Panjit International Inc.
PJQ4442P-AU_R2_000A1
onsemi
NTLJS3113PT1G
Rohm Semiconductor
RD3P200SNFRATL
Infineon Technologies
IAUS300N08S5N014TATMA1
Vishay Siliconix
IRFD9220PBF
STMicroelectronics