BSC105N10LSFGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 11.4/90A 8TDSON
$4.71
Available to order
Reference Price (USD)
5,000+
$1.57795
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC105N10LSFGATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSC105N10LSFGATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDD9409-F085
Vishay Siliconix
SI4155DY-T1-GE3
Microchip Technology
APT53N60BC6
Diodes Incorporated
DMNH10H028SK3-13
Rohm Semiconductor
RSL020P03TR
Diodes Incorporated
BS107PSTZ
Alpha & Omega Semiconductor Inc.
AOTL66518
Infineon Technologies
IPI90R800C3XKSA1
Infineon Technologies
BSC070N10LS5ATMA1
IXYS