BSC159N10LSFGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 9.4A/63A TDSON
$1.53
Available to order
Reference Price (USD)
5,000+
$1.09509
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSC159N10LSFGATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the BSC159N10LSFGATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Nexperia USA Inc.
PH2925U,115
Texas Instruments
CSD18504Q5AT
Rohm Semiconductor
R6507ENXC7G
Texas Instruments
CSD18503Q5A
NXP USA Inc.
BUK954R4-40B127
Diodes Incorporated
ZXMN10A25GTA
Diodes Incorporated
DMP21D6UFB4-7B
Nexperia USA Inc.
PMV120ENEAR
Vishay Siliconix
IRL620PBF
Vishay Siliconix