BSC190N15NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 50A TDSON-8-1
$3.52
Available to order
Reference Price (USD)
5,000+
$1.33548
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the BSC190N15NS3GATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's BSC190N15NS3GATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Nexperia USA Inc.
PMZ390UN,315
onsemi
NTP22N06
Rohm Semiconductor
SCT2280KEC
Panjit International Inc.
PJA3471_R1_00001
Diodes Incorporated
DMP2160UWQ-7
Nexperia USA Inc.
PSMN2R7-30BL,118
onsemi
NVBG015N065SC1
Infineon Technologies
AUIRFZ24NSTRL
IXYS
IXTT16N10D2
Vishay Siliconix