BSC520N15NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 21A TDSON-8-5
$1.82
Available to order
Reference Price (USD)
5,000+
$0.69889
10,000+
$0.67563
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the BSC520N15NS3GATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the BSC520N15NS3GATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SI4634DY-T1-E3
Taiwan Semiconductor Corporation
TSM070NA04LCR RLG
Rectron USA
RM2301E
Fairchild Semiconductor
IRFR110ATM
Infineon Technologies
BSC026N02KSG
onsemi
FCPF11N60NT
Texas Instruments
CSD18535KTTT
onsemi
NTMFS4C020NT1G
onsemi
NTB23N03RG
IXYS