BSG0810NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 25V 19A/39A 8TISON
$3.51
Available to order
Reference Price (USD)
5,000+
$1.12112
Exquisite packaging
Discount
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Choose the BSG0810NDIATMA1 from Infineon Technologies for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the BSG0810NDIATMA1 stands out for its reliability and efficiency. Infineon Technologies's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A, 39A
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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